AO4310 36v n-channel mosfet general description product summary v ds i d (at v gs =10v) 27a r ds(on) (at v gs =10v) < 3.1m w r ds(on) (at v gs = 4.5v) < 4.2m w 100% uis tested 100% r g tested symbol v ds the AO4310 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and crss.in addition,switching behavior is well controlled with a "schottky style" soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 36v drain-source voltage 36 g ds soic-8 top view bottom view d d d d s s s g v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2.3 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d r q ja 27 15 maximum junction-to-ambient a power dissipation b v 20 10 65 224 a 67 c/w w 3.6 p d avalanche energy l=0.1mh c pulsed drain current c t a =70c t a =25c avalanche current c v drain-source voltage 36 junction and storage temperature range -55 to 150 c 52 35 units thermal characteristics parameter typ max gate-source voltage 22 390 mj a i d 27 continuous drain current t a =25c t a =70c g ds soic-8 top view bottom view d d d d s s s g rev 0: february 2011 www.aosmd.com page 1 of 6
AO4310 symbol min typ max units bv dss 36 v v ds =36v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.8 2.3 v i d(on) 390 a 2.6 3.1 t j =125c 3.7 4.5 3.3 4.2 m w g fs 151 s v sd 0.7 1 v i s 5 a c iss 2595 3248 3900 pf c oss 790 1130 1470 pf c rss 16 54 95 pf r g 0.8 1.8 2.7 w q g (10v) 37 46.4 57 nc q g (4.5v) 16 20.6 27 nc q gs 8 nc q gd 6.2 nc t d(on) 8.5 ns t 4.8 ns v gs =0v, v ds =18v, f=1mhz switching parameters v ds =0v, v gs = 20v m w v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =18v, i d =20a total gate charge reverse transfer capacitance gate-body leakage current on state drain current gate resistance total gate charge gate source charge forward transconductance gate drain charge v ds =v gs i d =250 m a i d =250 m a, v gs =0v v gs =10v, v ds =5v drain-source breakdown voltage i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance diode forward voltage v gs =10v, i d =20a m a zero gate voltage drain current i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =18v, r =0.9 w , t r 4.8 ns t d(off) 40.8 ns t f 9.8 ns t rr 17 21.7 26 ns q rr 48 60.5 73 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =20a, di/dt=500a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =18v, r l =0.9 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: february 2011 www.aosmd.com page 2 of 6
AO4310 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4.5v 40 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 3 6 9 12 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4.5v rev 0: february 2011 www.aosmd.com page 3 of 6
AO4310 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 6 12 18 24 30 36 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =18v i d =20a 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 10ms 1.0 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 6 12 18 24 30 36 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =18v i d =20a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 10ms 1.0 10.0 100.0 1000.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) t a =25 c t a =150 c t a =100 c t a =125 c rev 0: february 2011 www.aosmd.com page 4 of 6
AO4310 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =65 c/w 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =65 c/w rev 0: february 2011 www.aosmd.com page 5 of 6
AO4310 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: february 2011 www.aosmd.com page 6 of 6
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